The over-barrier resonant states and multi-channel scattering by a quantum well
نویسندگان
چکیده
منابع مشابه
The Effect of Structural Parameters on the Electronic States and Oscillator Strength of a Resonant Tunneling Quantum Well Infrared Photodetector
In this paper a resonant tunnelling quantum well infrared photodetector (RT-QWIP) is discussed. Each period of this photodetector structure comprises of a resonant tunnelling structure (AlAs/AlGaAs/AlAs) nearby a quantum well (AlGaAs/GaAs). In this photodetector, photocurrent is produced when an electron makes a transition from the ground state of the well to an excited state which is coupled t...
متن کاملResonant tunneling in double-quantum-well triple-barrier heterostructures.
We present a low-temperature ~mK! magnetotransport study, using intense pulsed magnetic fields to 50 T, of two double GaAs quantum well, triple AlAs barrier resonant tunneling structures, which demonstrates the critical influence of the second quantum well on the tunneling behavior. We show that charge accumulation in the first well, and thus the overall tunneling characteristic, is controlled ...
متن کاملCurrent fluctuations in double-barrier quantum well resonant tunneling diodes
The measurements of the spectral intensity of the current fluctuations in double-barrier quantum well resonant tunneling diodes as a function of temperature and bias current are reported. Two types of devices were studied: one with AlAs barriers and GaAs well and contact regions, and the other has Alo,,Gae,As barriers. The frequency range covered is 1 Hz-100 kHz and the temperature range is 78-...
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A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schottky barrier height (SBH). (100) orientation provides lower effective Schottky barrier height in compa...
متن کاملHigh magnetic field tunneling transport in a double quantum well-triple barrier resonant tunneling diode
We have measured the magnetotransport of double GaAs quantum well-triple AlAs barrier resonant tunneling heterostructures in pulsed magnetic fields up to 48 T, and temperatures down to 0.3 K. The tunneling structure is designed for a near-simultaneous (triple) resonance, under bias, of the quantum well energy levels and the lowest quasi-2D emitter state. The fan chart of the I(V) resonances is ...
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ژورنال
عنوان ژورنال: The International Journal of Multiphysics
سال: 2008
ISSN: 1750-9548
DOI: 10.1260/175095408785416947